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IBM and Samsung say they have done well in producing semiconductor. At the same day of the IEDM conference in San Francisco, the two companies unveiled new designs for transistors directly on the chip. With current processors and SoCs, transistors sleep on top of silicon, and then electricity flows from side to side. In contrast, Vertical Transport Field Field Effect Transistors (VTFET) are interconnected and move directly.
According to IBM and Samsung, this design has two advantages. First, it will allow them to pass more restrictions to extend Moore Law beyond the 1-nanometer limit. Most importantly, its design makes it less prone to energy loss due to current efficiency. It is estimated that VTFET will lead to processors that run twice and use 85 percent less power than chips manufactured by FinFET transistors. IBM and Samsung say the system will one day allow for a whole week for phones at the same price. They say it could also lead to other energy-intensive activities, including cryptomining, energy efficiency and environmental impact.
IBM and Samsung have not said when they want to make a trade. They are not the only companies trying to push past the 1-nanometer barrier. , Intel stated that its goal is to complete the production of angstrom-scale chips by 2024. The company plans to complete the project using its new “Intel 20A” node with RibbonFET transistors.
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